| PART |
Description |
Maker |
| PTB20081 |
150 Watts, 470-860 MHz UHF TV Power Transistor
|
ERICSSON[Ericsson]
|
| MRF374D |
MRF374 470-860 MHz, 100 W, 28 V Lateral N-Channel Broadband RF Power MOSFET
|
Motorola
|
| MRF377R5 MRF377R3 MRF377 |
MRF377, MRF377R3, MRF377R5 470-860 MHz, 240 W, 32 V Lateral N-Channel RF Power MOSFET
RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| PTB20017 |
150 Watts, 86000 MHz Cellular Radio RF Power Transistor
150 Watts, 860-900 MHz Cellular Radio RF Power Transistor
150 Watts 860-900 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTF10139 |
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 60瓦，860-960兆赫GOLDMOS场效应晶体管
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| AWB7125 AWB7125P8 |
860 MHz to 894 MHz Small-Cell Power Amplifier Module
|
ANADIGICS, Inc
|
| DB-55008L-960 |
860 MHz - 960 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER ROHS COMPLIANT PACKAGE
|
ST Microelectronics
|
| CD310-N |
50 MHz - 860 MHz RF/MICROWAVE DIRECTIONAL COUPLER
|
ANDREW CORP
|
| BGD804 BGD804112 |
860 MHz, 20 dB gain power
|
NXP Semiconductors N.V.
Philips
|
| BGD904MI BGD904 |
860 MHz, 20 dB gain power doubler amplifier
|
Philips
|
